Dear Mehmet,

45 min is much too long. It seems that there is a big mistake in processing
the HMDS and/or the photoresist. I would recommend the refer to the
photolithography brochure and the application notes from Microchemicals
GmbH:

http://www.microchemicals.com/downloads.html

Regards,
André


-----Ursprüngliche Nachricht-----
Von: [email protected]
[mailto:[email protected]] Im
Auftrag von Mehmet Yilmaz
Gesendet: Montag, 21. September 2015 11:25
An: General MEMS discussion
Betreff: [mems-talk] About difficulty in photoresist development (if using
HMDS as adhesion layer)

Dear mems-talk community,
If I use HMDS as adhesion layer, I am having a problem with the development
of a photoresist called AZ4562 (about 10 micron thickness). In addition, I
am having the same development problem with AZ5214E (about 1.4 micron
thickness).

If I do not use HMDS, the development time is usually about 60 seconds, or
even less. However, if I use HMDS, the development time goes up to 45
minutes (not seconds...) and still the development is not successful, but
the resist is completely removed from some parts of the patterned areas on
the wafer.

Also, I have seen this problem with different substrates such as Silicon,
Quartz, and Pyrex.

I am wondering what would be the reason for that? Is it possible that HMDS
is old, and out of date? Could that explain the problem? Or, do you have any
other comments based on your own experience? Could you please comment?

I am looking forward to your replies.

Thanks in advance,

Mehmet

Mechanical Engineer
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