How to remove scallop polymer residual after STS2 DRIE
Youmin Wang
2015-12-14
Hi Mehmet,
Thank you so much, this is very good information. I have only etched up to
3 hours using post-etch removers, in concern with the damage to my silicon
structure. I think your experience is definitely helpful to me.
Thanks again!
Best,
Youmin
On Mon, Dec 14, 2015 at 9:53 AM, Mehmet Yilmaz
wrote:
> Hello again Youmin,
> Unfortunately, I am not an expert on the chemistry of the ALEG 380. I do
> not know how it works...
>
> I just remember very vividly that I used ALEG 380 for a 8-10 hours long
> process to remove a big chunk of BOSCH process polymer from a specific
> region while the rest of the wafer was also exposed to ALEG 380. I worked
> with SOI wafer. When I used ALGE 380, silicon dioxide surfaces (BOX), and
> "silicon device layer" surfaces were exposed ALEG 380. I do not remember
> oxide or Si being etched in the end of 8-10 hours long polymer removal
> session at 80 degrees Celcius.
>
> Regards,
>
> Mehmet
>
>
> On Mon, Dec 14, 2015 at 7:39 PM, Youmin Wang
> wrote:
>
>> Hello Mehmet,
>>
>> Thank you very much for your suggestions!!
>>
>> I have worked with EKC270 from DuPont:
>>
>> http://www.dupont.com/content/dam/assets/products-and-services/electronic-
electrical-materials/assets/EKC/EKC270.pdf
>>
>> I think they both remove the polymer and try to "lift off" the residue by
>> etching the substrate slightly? Thanks in advance for your comments.
>>
>>
>> Best,
>> Youmin
>>
>> On Mon, Dec 14, 2015 at 9:28 AM, Mehmet Yilmaz
>> wrote:
>>
>>> Dear Youmin,
>>> You may try ALEG 380. The link for the product is below:
>>>
>>> http://www.avantormaterials.com/Electronic-Materials/Markets-and-
Applications/Semiconductor-Chemicals/Post-Etch-Residue-Removal.aspx
>>>
>>> I used ALEG 380 at 80 degress Celcius temperature. And it definitely
>>> worked in my case. However, I see that your features are way more smaller
>>> than what I had when I used ALEG 380. My lines and spaces were 2um/2um.
>>>
>>> I hope this helps! Good luck!
>>>
>>> Bests,
>>>
>>> Mehmet
>>>
>>> On Sun, Dec 13, 2015 at 9:32 PM, Youmin Wang
>>> wrote:
>>>
>>>> Hello Everyone,
>>>>
>>>> I want to etch the silicon structure below to half of its heigh (from
>>>> 2un to 1um) in standard BOSCH process:
>>>>
>>>> [image: Inline image 1]
>>>>
>>>> However I got a lot of sidewalls un-removed:
>>>>
>>>> [image: Inline image 2]
>>>>
>>>>
>>>> I tried with EKC270 post-etch cleaning but there are still quite a few
>>>> sidewalls still there, topview is like:
>>>>
>>>> [image: Inline image 3]
>>>>
>>>> Do you think whether my etching recipe has any problem, or you know
>>>> whether I can do something post-etch to clean those standing sidewalls?
>>>> Thanks a lot!
>>>>
>>>>
>>>>
>>>> Best,
>>>> Youmin
>>>>
>>>>
>>>>
>>>> _______________________________________________
>>>> Hosted by the MEMS and Nanotechnology Exchange, the country's leading
>>>> provider of MEMS and Nanotechnology design and fabrication services.
>>>> Visit us at http://www.mems-exchange.org
>>>>
>>>> Want to advertise to this community? See http://www.memsnet.org
>>>>
>>>> To unsubscribe:
>>>> http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>>>>
>>>>
>>>
>>
>