It may have something to do with temperature. Temperature will increase
with time, and the etch rate will also increase exponentially with
temperature.

On Mon, Feb 1, 2016 at 2:29 PM, Andrew Xiang  wrote:

> When I was ashing S1800 photoresist using Pure O2, I noticed the following:
> After 5 min, or 7min, the photoresist layer stayed the same. The layer is
> only 0.5um thick to begin with.
> But if I look at it after 10min, all PR is gone.  Seems it is hard to find
> the middle point.
> Does the O2 plasma turn everything in ash first and then poof, everything
> is gone? I thought it
> etch layer by layer.
>
> Power is pretty low, 200W, 0.1-0.2torr. Pure O2, RF plasma.
>
> -Andy
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