Hi Mehmet
The process might work. You need to apply the highest voltage possible. It
should still work with the alumina. Make sure to have the  si with no native
oxide.
You will have enough force to bond the surfaces and i thin with 15nm of alumina,
there will be enough oxygen to react with the silicon to create the bond. Make
sure to stop the process once the current dropped to about 5-10% from the start
current.

Ramadan karim


Shay

> On Jun 6, 2016, at 19:51, Mehmet Yilmaz  wrote:
>
> Dear mems-talk community,
>
> Question about anodic wafer bonding of "silicon to aluminum oxide
> coated borosilicate glass (Pyrex)"
>
> We are planning to wafer bond silicon wafer surface to borosilicate glass
> substrate surface via anodic bonding. It seems that this is well known, and
> documented. Although it is well known, this may bring some complications to
> our integration process flow. Because of these complications, we are
> looking for alternative approaches that may be tried to reduce the
> complications in the integration process.
>
> An idea that we have that will reduce some process steps and complications
> is below:
>
> Our integration process directs us to think about wafer bonding of silicon
> substrate to 15nm aluminum oxide coated borosilicate glass (Pyrex). In case
> you wonder, 15nm aluminum oxide is ALD (Atomic layer Deposition) coated on
> Pyrex.
>
> We wonder if anyone of you have any experience with wafer bonding of
> silicon substrate to aluminum oxide coated borosilicate glass (Pyrex), or a
> similar material stack? If you do not have direct experience, comments
> based on your anodic wafer bonding experience are also very welcome.
>
> Regards, and thanks in advance,
>
> Mehmet Yilmaz
> Mechanical Engineer
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