Dear Shay,
Thanks for the answer and good wishes!
We will definitely try your valuable suggestions.

Regards,

Mehmet Yilmaz
Mechanical Engineer

On Wed, Jun 8, 2016 at 6:41 AM, Shay  wrote:

> Hi Mehmet
> The process might work. You need to apply the highest voltage possible. It
> should still work with the alumina. Make sure to have the  si with no
> native oxide.
> You will have enough force to bond the surfaces and i thin with 15nm of
> alumina, there will be enough oxygen to react with the silicon to create
> the bond. Make sure to stop the process once the current dropped to about
> 5-10% from the start current.
>
> Ramadan karim
>
>
> Shay
>
> > On Jun 6, 2016, at 19:51, Mehmet Yilmaz  wrote:
> >
> > Dear mems-talk community,
> >
> > Question about anodic wafer bonding of "silicon to aluminum oxide
> > coated borosilicate glass (Pyrex)"
> >
> > We are planning to wafer bond silicon wafer surface to borosilicate glass
> > substrate surface via anodic bonding. It seems that this is well known,
> and
> > documented. Although it is well known, this may bring some complications
> to
> > our integration process flow. Because of these complications, we are
> > looking for alternative approaches that may be tried to reduce the
> > complications in the integration process.
> >
> > An idea that we have that will reduce some process steps and
> complications
> > is below:
> >
> > Our integration process directs us to think about wafer bonding of
> silicon
> > substrate to 15nm aluminum oxide coated borosilicate glass (Pyrex). In
> case
> > you wonder, 15nm aluminum oxide is ALD (Atomic layer Deposition) coated
> on
> > Pyrex.
> >
> > We wonder if anyone of you have any experience with wafer bonding of
> > silicon substrate to aluminum oxide coated borosilicate glass (Pyrex),
> or a
> > similar material stack? If you do not have direct experience, comments
> > based on your anodic wafer bonding experience are also very welcome.
> >
> > Regards, and thanks in advance,
> >
> > Mehmet Yilmaz
> > Mechanical Engineer
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