Hello, everybody:

I have two questions about TiNi thin films:

1. I sputter-deposited TiNi thin films onto Si substrates and anealed them at
550C
for 30min, so when crystallization has finished but the temperature is still
kept at
550C, how much would the residual stress between the SMA film and the substrate
be?
Should I suggest the stress be zero because of the crystal structure
reconstruction?

2. If the maximum recoverable strain of a TiNi thin film is 1%, during the
martensitic transformation, only 0.3% recoverable strain is induced by external
stress,so when reverse martensitic transformation happens, should the 0.3%
strain be
recovered competely at the end of the reverse transformation or at the 30
percent of
the whole reverse proceeding?

Thanks a lot!

Wang li
99-10-22 17:11:21
[email protected]
[email protected]