Hello, everybody:
            We are developing a microchannel etched isotropically, all I read
about isotropic etching silicon is using HNA, with agitation, then I can get
good circular profiles of my channel, but, my classmates told me there seems
to be a paper about the condition about the HNA... if the mask opening size
different, CONDITION WILL BE DIFFERENT!
            Is that true? but I can't find any paper about it...
            When I try etching silicon with opening (100mu m) without agitation
by H:N:A=5:10:16 from paper, the cross section profile seems to be like cars
two wheels, not circular...

            Does anybody has experience about isotropic etching, please tell
me, I'd appreciate it!

            Thanks a lot,

        Sincerely,
                                Jerry Lee
        Institute of Applied Mechanics
        e-mail:[email protected] / [email protected]