Simulation tool for anistropic and isotropic wet etching
Olaf Than Inst. f. Mikrotechnik
1995-07-07
Moderator's note:
Sridhar Gullapalli is working with Mr. Than to make this simulation tool
available via the MEMS Archive. A follow-up message will be posted when the
tool is ready for distribution.
- bill athas
Dear Colleagues,
I have developed a software tool for simulating anisotropic and isotropic wet
etching. It is based on a three-dimensional model using cellular automata. The
program simulates the etch process on the atomic level.
The tool has several noteworthy features:
* different etch rates are possible for different etchants, e.g., KOH, KOH/
IPA, and TMAH.
* basic substrates: (100) and (110) Si
* double-sided etching. A mask on the top and another one on the bottom side
are simulated simultaneously.
* the simulation may be paused so that you can change the mask process
parameters, and then resumed.
* the areas for selective etch-stop are definable.
* the results can be exported in DXF.
* photo-realistic images of the results can be created.
I am looking for opportunites to integrate my simulation tool (running on PC,
Mac, and Unix workstations (HP 70xx) ) with MEMS-CAD systems and I am looking
for places to distribute the simulator.
If this sounds interesting to you, please send me e-mail for more information.
_____________________________________________________________________
Institut fuer Mikrotechnik der TU-Braunschweig
W-3300 Braunschweig Langer Kamp 8
Tel: +49 531 3913320 FAX: +49 531 3918101
Olaf Than Tel: +49 531 3913334
Internet: [email protected]