RE: Patterning of silicon nitride using KMER resist
Straub, Marc (M.A.)
1999-05-12
Hi Vikas,
I'm assuming you can't use plasma etch, which is the standard nitride etch
process. There are chemistries that are highly selective to oxide, which
can be grown under the nitride, if you're trying not to damage the silicon
surface. Wet etching nitride is rarely used by anyone, though it is
commonly stripped with concentrated HF.
The only nitride etch I've ever used is phosphoric acid (which must be
refluxed to maintain it's concentration). Oxide (LTO or some other
deposited film) can be used as a mask, and some other metals may also be
suitable (check a standard metal corrosion reference for compatibility). I
wasn't aware that NaOH etched nitride, but I'd be interested in any
references you have.
Sorry I can't be of any more help. Good luck.
--
Marc Straub
Advanced Technology Development
Visteon Automotive Systems, Ford Motor Company
-----Original Message-----
From: vikas Galhotra [mailto:[email protected]]
Sent: Friday, May 07, 1999 5:38 PM
To: [email protected]
Subject: Patterning of silicon nitride using KMER resist
Hello Colleagues:
I am looking for a photoresist to pattern silicon nitride thin film.
Specifically I wanted to use KMER resist as it goes well with dilute
NaOH solution which I am planning to use as an etchant for silicon
nitride. If someone can give me some information where to get this KMER
resist from, I will appreciate that very much.
Alternatively If someone can suggest
(1) some other photoresist that goes well with dilute solution of NaOH
or
(2) some other etchant for silicon nitride (other then anything that
contains HF)
I will be very thankful.
My e-mail address is "[email protected]"
Thanks in advance
Vikas Galhotra
Research Scientist
TiNi Alloy Company
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