Hi MEMS experts,

I have a mems structure with the topmost layer as SiO2. I need to wafer
bond this to another wafer with Silicon Nitride. This can be done using
Si-SixNy fusion bonding but the problem is this. I have an Aluminum
pattern in the middle of the Silicon Nitride and since the fusion
bonding process is done at 1000-1100 C where as the melting point of Al
is about 660 degrees i cant go for this method. Does anybody have any
ideas on how to do this.

I am open to the idea of depositing some other layer on the silicon
dioxide initially and then fusing it at  a lower temperature to the
silicon nitride.

Any other ideas are also welcome.

Thank You

Karthik K