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Hello Wilfried,
Recently we have encountered many requests for this type of service. We can
provide 15 um (150,000Angstroms) of Thermal Oxide on 4" wafers. However, the
cost is very expensive due to the science of this type of film. The general
rule with Oxide is that every additional 1000 Angstroms takes twice as long as
the 1,000 before it. This is due to the fact that the gasses must penetrate
the existing Oxide in order to reach and react with the Si layer. The
estimated deposition time (actual furnace time) for this process is 52 days.
The cost of the furnace is $3,500 per day. The total cost for the deposition
would be $182,000. The furnace can hold up to 300 4" and 6" wafers and 250 8"
wafers. The quantity would be up to you since you would be paying for furnace
time not the wafers. There is a concern with warp. When this much Oxide is
put on a 4" wafer that is subjected to such high heat (1100C) for extended
periods of time warp is inevitable. We will take certain precautions to
minimize the amount of warpage encountered.
For reference the estimated cost for 10 um (100,000A) $80,500. If you do not
require 15 um the thinner layer is significantly more cost effective. Perhaps
several groups in the MEMS community could gather together and run this process
together to minimize the cost. If you have any questions my contact
information is at the bottom of this page. I will do all I can to help.
Regards,
Roger Neef
Silicon Wafer Division
Silicon Valley Microelectronics, Inc.
Tel: 408-985-5111
Fax: 408-244-6075
[email protected]
http://www.svmi.com
09:04 AM 11/2/2000 +0100, Wilfried Noell wrote:
>Hello MEMS community,
>
>I am looking for silica-on-silicon wafers, or better:
>100mm (4") Si wafers with an approx. 15 micron thick SiO2 layer.
>The SiO2 maybe either PECVD or thermally grown.
>
>Any hint is highly appreciated!
>
>Best regards
>Wilfried Noell
>
Roger Neef
Silicon Wafer Division
Silicon Valley Microelectronics, Inc.
Tel: 408-985-5111
Fax: 408-244-6075
[email protected]
http://www.svmi.com
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Hello Wilfried,
Recently we have encountered many requests for this type of
service. We can provide 15 um (150,000Angstroms) of Thermal Oxide
on 4" wafers. However, the cost is very expensive due to the
science of this type of film. The general rule with Oxide is that
every additional 1000 Angstroms takes twice as long as the 1,000 before
it. This is due to the fact that the gasses must penetrate the
existing Oxide in order to reach and react with the Si layer. The
estimated deposition time (actual furnace time) for this process is 52
days. The cost of the furnace is $3,500 per day. The total
cost for the deposition would be $182,000. The furnace can hold up
to 300 4" and 6" wafers and 250 8" wafers. The
quantity would be up to you since you would be paying for furnace time
not the wafers. There is a concern with warp. When this much
Oxide is put on a 4" wafer that is subjected to such high heat
(1100C) for extended periods of time warp is inevitable. We will
take certain precautions to minimize the amount of warpage
encountered.
For reference the estimated cost for 10 um (100,000A) $80,500. If
you do not require 15 um the thinner layer is significantly more cost
effective. Perhaps several groups in the MEMS community could
gather together and run this process together to minimize the cost.
If you have any questions my contact information is at the bottom of this
page. I will do all I can to help.
Regards,
Roger Neef
Silicon Wafer Division Silicon Valley Microelectronics, Inc. Tel: 408-985-5111
Fax: 408-244-6075 [email protected] http://www.svmi.com
09:04 AM 11/2/2000 +0100, Wilfried Noell wrote:
>Hello MEMS community,
>
>I am looking for silica-on-silicon wafers, or better:
>100mm (4") Si wafers with an approx. 15 micron thick SiO2
layer.
>The SiO2 maybe either PECVD or thermally grown.
>
>Any hint is highly appreciated!
>
>Best regards
>Wilfried Noell
>
Roger Neef
Silicon Wafer Division Silicon Valley Microelectronics, Inc. Tel: 408-985-5111
Fax: 408-244-6075 [email protected] http://www.svmi.com
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