I guess that depends on what you consider deep.

I have anisotropically etched silicon to a depth of 30 microns using SF6, O2,
and CHF3 in a conventional conventional RIE.  The etch rate was ~0.5 micron/min.
Near vertical sidewalls are achievable if the substrate is attached to the
electrode with vacuum grease..

With "DRIE" such as the Bosch process the etch rate is considerably higher, but
it will cost you $.

>>> "Chan (Chacrya) Tith"  02/21/01 10:24AM >>>
Hi, I was wondering if someone could tell me the pros and cons of RIE vs
DRIE.  I haven't found much information on either topics, so if anyone can
help me out, it would really help.  thanks in advance.  please respond to
[email protected]

thanks

_________________________________________________________________
Get your FREE download of MSN Explorer at http://explorer.msn.com