Hello, everyone. I am working on the micro sensor development.
Does anybody know the recipe on annealing the piezoresistor?
I did boron ion implantation on my single crystal silicon to make =
piezoresistive sensors(cantilever beam) with 30keV energy and 10^14/cm2 =
dose.
Now I need to do annealing to activate these impurities.
What kind of temperature and annealing time gives maximum sensitivity?( =
I meam delta R(resistance) )
If you recommand any reference on this or give me any advice, it will be =
greatly helpful and appreciated.

Thank you very much.

Good luck on our search.

Jongbaeg Kim