hello everybody,
  I got for dry etching (RIE) of  a 1 µm SiO2 layerand and wish to obtain a
perfect surface quality of sidewalls.
Thanks to all who will respond which masking technique is neeeded  to obtain
the high quality facets. Actually we use Cr mask+ lithography but the result
is not very well.
Best regards
Christophe


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Dr. Christophe Gorecki, CNRS Senior Researcher
Laboratoire d'Optique P.M. Duffieux, Faculte des Sciences et Techniques
16 route de Gray, 25030 Besancon, France
Tel: +33-3-81666607, fax: +33-3-81666423
e-mail: [email protected]