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MEMSnet Home: MEMS-Talk: re:cleaning after KOH etching (shankar)
re:cleaning after KOH etching (shankar)
2001-08-23
Regan Nayve
Problem of Undercut
2001-09-16
shankar
re:cleaning after KOH etching (shankar)
Regan Nayve
2001-08-23
To completely clean the wafer (free from Ag and K elements) after KOH
etching perform the following cleaning sequence.

1) HCl:H2O2:H2O=1:1:6 (by Volume)  10min  (boil)
2) DIW
3) HF
4) HCl:H2O2:H2O=1:1:6 (by Volume)  10min (boil)
5) DIW

For moderate cleaning of KOH processed wafer,
1) NH4OH:H2O2:H2O=1:1:6 (by Volume) 10min (boil)
2) DIW
3) HF
4) DIW

Hope this information could be of help.

Best regards,
Regan Nayve

>
> Date: Tue, 21 Aug 2001 09:02:00 -0700 (PDT)
> From: shankar 
> To: [email protected]
> Subject: [mems-talk] cleaning after KOH etching
>
> could somebody please tell me the steps that should be followed for
> cleaning the anisotropically etched wafer with KOH. i need to etch
> V-grooves in (100) silicon wafer using KOH.
>
>         THE MAN WHO DOES NOT READ GOOD BOOKS HAS NO ADVANTAGE
>                         OVER THE MAN WHO CANNOT READ.........
> ****************************************************************************
>         Ravi Shankar
>         Engineer VLSI-FAB,                    Phone: 91-172-254401
>         Semiconductor Complex Ltd.,                  Ext: 576,552.
>         Phase-VIII, S.A.S Nagar,                Fax:91-172-253378
>         Punjab. Pin:160059.                E-mail: [email protected]
>
> ****************************************************************************



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