Hi Sushant,

I'm working on AlN thin film.
AlN must be c-axis oriented perpendicular to substrate, if you want
maximum electromechanical coupling.
We deposit polycryistalline AlN by reactive DC magnetron sputtering of
an Al target in gas mixture of N2 and Ar on Al electrode with these
parameters:
sputtering pressure: 0.66e-2 mbar
substrate temperature: 140°C
ratio N2 / N2 + Ar: 65%
AlN is c-axis oriented perpendicular to substrate, and AlN is in tensile
stress.

Laurie