Hello MEMS-researcher,
I'm working with aluminum structures and it's very important that I
keep the native oxide layer thickness to a minimum. Unfortunately, I
have to remove organic components on the aluminum layer by using O2
plasma.
Does anyone know about how the native aluminum oxide layer is
affected/grows by the oxide plasma etch?
I'm working with cold welding/compression bonding of aluminum to
aluminum structures, and any oxide layer in between is problematic
for those processes. If someone has experiences with could be useful
for me, I'd be very grateful for contacting me.
Thanks a lot for any help,
Joachim Oberhammer.
--
------------------------------------------------------------------------------
Joachim Oberhammer, Dipl.-Ing.
Royal Institute of Technology (KTH) Phone: +46/(0)8 790 6250
Dep. of Signals, Sensors and Systems Fax: +46/(0)8 10 0858
Microsystem Technology (MST) Mobile: +46/(0)70 692 1858
e-mail: [email protected]
Osquldas väg 10 homepage: http://www.s3.kth.se/mst/
SE-100 44 Stockholm, Sweden
