I can confirm that the dielectric constant of SU-8 is around 3, but this
will be influenced by the processing conditions that the resist is
exposed to...For more information please visits the MicroChem website at
www.microchem.com or Mark Shaw at [email protected]
Mark Shaw
Product Development & Applications Manager
-----Original Message-----
From: [email protected]
[mailto:[email protected]]
Sent: Thursday, September 13, 2001 12:01 PM
To: [email protected]
Subject: mems-talk digest, Vol 1 #44 - 11 msgs
Send mems-talk mailing list submissions to
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When replying, please edit your Subject line so it is more specific
than "Re: Contents of mems-talk digest..."
Today's Topics:
1. Re: Acoustic impedance (Laurie Valbin)
2. SU 8 electrical properties (A.J Pang)
3. Tencor P-1 profilometer software (Andy Cunningham)
4. Measuring coefficient of thermal expansion (CTE) for Silicon
(Randall Cha)
5. Processor of polyimide (Kapton) substrates (Kirt & Erika
Zipf-Williams)
6. High Resolution Glass Plates (Sugata Bhattacharya _98007036_)
7. transparent substrates in UV ? (Vincent Mortet)
8. New mailing list ! (Julien Charton)
9. dialectric constant of SU-8 (Jim McAdams)
10. Re: Measuring coefficient of thermal expansion (CTE) for
Silicon (Kenneth Smith)
--__--__--
Message: 1
Date: Wed, 12 Sep 2001 17:46:49 +0200
From: Laurie Valbin
Organization: ESIEE
To: [email protected]
Cc: [email protected]
Subject: Re: [mems-talk] Acoustic impedance
Hi Sushant,
the acoustic impedence formula for a plane wave (T or L) is: sqrt(cii *
density) where cii is elastic coefficient (N/m2)
AlN = 36e6 N.s/m3
SiO2 = 13e6 N.s/m3
W = 100e6 N.s/m3
AlNOx ???
Laurie
[email protected] wrote:
> Hi,
> I would be grateful if anybody could give me the acoustic impedence
for the
> following materials
> AlNOx,SiO2,Tungsten (w) and AlN.
> I would also like to know a reference book that would give me the
acoustic
> impedence of materials in general.
> Thank you,
> Regards,
> Sushant
>
> Sushant Salgar
> Research Assistant,
> Center for Solid State Electronics Research,
> Electrical Engineering Dept,
> Arizona State University.
>
> _______________________________________________
> mems-talk mailing list
> [email protected]
> To unsubscribe or change your list options, use:
> http://fab.mems-exchange.org/mailman/listinfo/mems-talk
--__--__--
Message: 2
From: "A.J Pang"
To:
Date: Wed, 12 Sep 2001 17:14:20 +0100
Subject: [mems-talk] SU 8 electrical properties
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Dear researcher,
Does anyone know the electrical properties of SU-8 such as
1.) Di-electric constand
2.) conductivity
very much thanks for helping
AJ Pang
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Dear researcher,
Does anyone know the electrical =
properties of SU-8=20
such as
1.) Di-electric constand
2.) conductivity
very much thanks for =
helping
AJ Pang
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--__--__--
Message: 3
From: "Andy Cunningham"
To:
Date: Wed, 12 Sep 2001 14:23:46 -0700
Subject: [mems-talk] Tencor P-1 profilometer software
Hello MEMS World,
We have a Tencor P-1 profilometer, which is no longer supported in any
way
by Tencor.
Our current ver. 1.5.1 operating software doen't support automatic
sequencing.
Does anyone know where I could get a copy of operating software that
supports automatic sequencing?
Thanks in advance,
Andy Cunningham
Silicon Designs Inc.
(425) 391-8329
[email protected]
--__--__--
Message: 4
Date: Thu, 13 Sep 2001 09:31:50 +0800
From: "Randall Cha"
To:
Subject: [mems-talk] Measuring coefficient of thermal expansion (CTE)
for Silicon
Dear colleagues,
I will like some information regarding the thermal expansion of
coefficient. I found some data which indicated Si has a CTE ranging from
2.6E-06 to 4.1E-06 W/mK.
What causes this range of CTE variation? I suspected 2 causes:
a) these CTE values were measured at different temperatures
c) these CTE values are dopant dependent (???)
Please kindly advise. In addition, if any vendors can supply me with
silicon substrates (2", 4", 6") with CTE of 4.1, please kindly drop me
another email.
Rgds,
Randall Cha
DL Pte Ltd, Singapore
Tel: 65-415 4447
Fax: 65-415 4444
--__--__--
Message: 5
From: "Kirt & Erika Zipf-Williams"
To: "MEMS Discussion Group"
Date: Wed, 12 Sep 2001 21:24:18 -0700
Subject: [mems-talk] Processor of polyimide (Kapton) substrates
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Is anyone aware of companies that will do processing=20
such as photolithography and metal depositions on polyimide/Kapton =
substrates?
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Is anyone aware of companies that will
=
do=20
processing
such as photolithography and =
metal depositions=20
on polyimide/Kapton substrates?
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--__--__--
Message: 6
Date: Thu, 13 Sep 2001 11:56:12 +0530 (IST)
From: Sugata Bhattacharya _98007036_
To:
Subject: [mems-talk] High Resolution Glass Plates
Sir,
For a number of ongoing projects in the Electrical Department of the
Indian Institute of Technology,Powai, Mumbai, we require hrp ( High
Resolution Glass Plates) for making masks for electronic circuits
The make of the plates is Kodak
They should be of a size lesser than 4" by 4", of Type 2A, with a
thickness of less than 5mm.
Our requirement will be around 50 plates.
We have contacted the local kodak office in Mumbai, but they have been
unable to meet our order. They say they have hrp's of dimension
8.5"X10".
Our requirement is of a size lower than 4"X4".
If anybody in the newsgroup knows about any vendor/dealer who can supply
me the above mentioned HRPs please send an email
Thanking you,
Sugata Bhattacharya
Senior Undergraduate
Electrical Engineering
Indian Institute of Technology, Mumbai
Address:
H6-238, IIT Campus, Powai, Mumbai-400076
--__--__--
Message: 7
From: "Vincent Mortet"
To: "MEMS"
Date: Thu, 13 Sep 2001 09:03:03 +0200
Subject: [mems-talk] transparent substrates in UV ?
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Hi,
I'm looking forward substrate (Al2O3 or glass or quartz) with no =
optical absorption until 6.2eV for UV absorption (in transmission mode)
=
on AlN & BN film deposited on these transparent substrates with such =
dimention: 1cm x 1cm x 0.5-0.3mm
Could someone tell me where I can find such subtrate (for wise
price).=20
=20
Best regards
Vincent Mortet
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Hi,
I'm looking forward substrate (Al2O3 or
=
glass or=20
quartz) with no optical absorption until 6.2eV for UV absorption (in=20
transmission mode) on AlN & BN film deposited on these
transparent=20
substrates with such dimention: 1cm x 1cm x 0.5-0.3mm Could someone =
tell me=20
where I can find such subtrate (for wise price).
Best regards
Vincent =
Mortet
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--__--__--
Message: 8
From: "Julien Charton"
To: "MEMS TALK"
Date: Thu, 13 Sep 2001 13:13:29 +0200
Subject: [mems-talk] New mailing list !
Dear all,
I created a new mailing list focused on MEMS design tools:
- Integrated tools such as CoventorWare
- Analytical and behavioural modeling
- Actuator and sensors concepts
- ...
This mailing list is hosted by "Yahoo groups", and you can subscribe by
simply sending an e-mail to:
[email protected]
You can also visit the group home page at:
http://groups.yahoo.com/group/mems-design
Regards,
Julien Charton
--__--__--
Message: 9
From: "Jim McAdams"
To:
Date: Fri, 24 Aug 2001 13:15:27 -0400
Subject: [mems-talk] dialectric constant of SU-8
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Microchem in Newton MA would have information on SU-8. I believe =
the dialectric constant is around 3. =20
Howard
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Microchem in Newton
=
MA would=20
have information on SU-8. I believe the dialectric constant is =
around=20
3.
Howard
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--__--__--
Message: 10
Date: Thu, 13 Sep 2001 08:02:26 -0700
From: Kenneth Smith
Organization: Kmbh Associates
To: Randall Cha
CC: [email protected]
Subject: Re: [mems-talk] Measuring coefficient of thermal expansion
(CTE) for
Silicon
Dear Randall,
The CTE range is a function of temperature the 2.6E-06 is at 293 degree
K and the 4.1E-06 is at 1400 K.
You can contact me with any details of your specific needs in 2", 4" and
6" Silicon wafers.
Regards,
Ken
Randall Cha wrote:
>
> Dear colleagues,
>
> I will like some information regarding the thermal expansion of
> coefficient. I found some data which indicated Si has a CTE ranging
from
> 2.6E-06 to 4.1E-06 W/mK.
>
> What causes this range of CTE variation? I suspected 2 causes:
>
> a) these CTE values were measured at different temperatures
> c) these CTE values are dopant dependent (???)
>
> Please kindly advise. In addition, if any vendors can supply me with
> silicon substrates (2", 4", 6") with CTE of 4.1, please kindly drop me
> another email.
>
> Rgds,
> Randall Cha
> DL Pte Ltd, Singapore
> Tel: 65-415 4447
> Fax: 65-415 4444
>
> _______________________________________________
> mems-talk mailing list
> [email protected]
> To unsubscribe or change your list options, use:
> http://fab.mems-exchange.org/mailman/listinfo/mems-talk
--
Ken Smith
Kmbh Associates
4968 Charter Road
Rocklin, CA 95765 USA
510-714-5055 Efax- 510 217 4421 or 561 658 6136
High Purity Float Zone and Specialty CZ Silicon for Power, IR and
Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor
applications. Service in SOI, Polishing SSP and DSP.
--__--__--
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