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MEMSnet Home: MEMS-Talk: RE: mems-talk digest, Vol 1 #47 - 4 msgs
RE: mems-talk digest, Vol 1 #47 - 4 msgs
2001-09-17
Wissman, Barry
2001-09-17
Kunal Vaed
Silicon Germainium wafers
2001-09-17
Kenneth Smith
2001-09-18
Tom Wester
RE: mems-talk digest, Vol 1 #47 - 4 msgs
Kunal Vaed
2001-09-17
Compensation structures can be added to the mask layout to decelerate the
faster etching planes [(411) as suggested by some authors] and prevent
corner undercutting. The dimensions of the compensation structure depend on
the concentration of etchant and some critical etch ratios. Some good
references for corner compensation schemes are:
1. Mayer et al, J.Electrochem. Soc.,(1990),137(12), 3947
2. Sandmaier et al, IEEE Transducers'91, (1991),456-459
3. Enoksson, J. Micromech. Microeng. (1997),7,141-144

Kunal Vaed
Passives Integration
Silicon Germanium Technology
IBM Microelectronics
Hopewell Junction, NY 12533



************************************************************
Eh bien - Dans un monde tellement laid
La Beauté, c'est la seule véritable protestation
>Ah, in such an ugly world
Beauty, the only real protest
************************************************************ >From: "Wissman, Barry" >To: "'[email protected]'" >Subject: [mems-talk] RE: mems-talk digest, Vol 1 #47 - 4 msgs >Date: Mon, 17 Sep 2001 17:24:19 -0400 > >Ravi, >The undercutting of convex edges (i.e. outside corners)is one of the >fundamental limitations of the anisotropic wet-etching process. It is a >matter of crystallography, not the specific proces you are using. A number >of authors have achieved some succes in reducing this effect through the >addition of compensation features to the etch mask, although these can be >cumbersome. The book by Madou has some excellent references on this topic, >and is probably your best starting place. Good luck! > >Regards, >Barry D. Wissman, Ph.D. >MEMS Process Manager >Nanovation Technologies, Inc. >[email protected] >www.nanovation.com > > >-----Original Message----- >Message: 1 >Date: Sun, 16 Sep 2001 14:24:23 -0700 (PDT) >From: shankar >Reply-To: shankar >cc: [email protected] >Subject: [mems-talk] Problem of Undercut > >Hi everybody, > i am making some v-grooves in silicon, and with good suggestion form this >discussion group,i was able to settle the cleaning problem after wet >silicon etching. >Now my problem is the UNDERCUT. Basically at convex edges i have problem >that the feature instead of being right angled becomes rounded.i use KOH >at 80 deg cel. for etching silicon. how do one take care of this effect? >Regds >Ravi Shankar >Semiconductor Complex Ltd., >India. > > > > >_______________________________________________ >mems-talk mailing list >[email protected] >To unsubscribe or change your list options, use: > http://fab.mems-exchange.org/mailman/listinfo/mems-talk _________________________________________________________________ Get your FREE download of MSN Explorer at http://explorer.msn.com/intl.asp
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