Dear all,

I need to build some cantilever beams with relatively large gaps.
I need 2 different gaps on the same wafer : 15um and 25 um.

I saw a similar device using a thick sacrificial photoresist:
  - the photoresist is deposited and patterned
  - the photresist corners are rounded
  - the metal is evaporated end patterned
  - the photoresist is removed with an isotropic O2 plama etch

So my questions are:
  - is it possible to deposit and pattern 2 different layers of resist, in
order to have
    three different heights on the same wafer:
        0 um: where both resist layers have been removed
       15um: where only one layer has been removed
       25um: where none of the resist layer has been removed
    the profile would be something like this:

                        ______             25um
         ____       ___/      \___         15um
_______/    \_____/              \______   0um

(you have to read this with fixed-width characters...)


  - is it possible to deposit and pattern a metal film on this kind of profile?
   ( the minimum pattern size will be around 50um)

- What is the best way to remove the resist at the end ?

- Relatively high deflections and forces will be applied to the released
structure.
   What kind of metal, with what kind of deposition process, will give
   the best mechanical properties (high elastic limit)


Thanks in advance,
julien