Your question is a good one.  Many people assume that 'glass' is as easy to
etch as SiO2, but it just is not so!  Fluorine chemistry will remove SiO2
(e.g. CF4, CHF3, C4F8) but will not touch Al2O3.  You need chlorine and/or
Bromine in there in some form too.  It has been done using CF3Cl, but this
is a CFC which is either banned or about to be.  Try running something like
a mix of CF4 and Cl2 if your chamber is load-locked, or you have a glove
box.  If you don't, avoid Cl2 as you are likely to get a very nasty smell
when you open the chamber.  Other possible gases include BCl3, HBr and
SiCl4, but all these are toxic and corrosive, so need to be treated with
caution.  This area is beginning to develop.  Keep in touch with the various
manufacturers (see the equipment list on
http://www.e-insite.net/semiconductor/index.asp?layout=buyersGuideSearch)
and look for new data sheets relating to this.

Regards,

Martin Walker, Tactical Marketing Engineer, Oxford Instruments Plasma
Technology
(www.oxford-instruments.com/plmchp5.htm)
----- Original Message -----
From: "Robert Dean" 
To: 
Sent: Friday, December 07, 2001 4:00 PM
Subject: [mems-talk] plasma chemistry for E-glass etching


> Hello,
>
> I am looking for a plasma chemistry for RIE etching E-glass, which is
> composed of silicon dioxide, calcium oxide, aluminum oxide, boron oxide,
> and trace amounts of sodium, potassium and magnesium oxides.  Silicon
> dioxide is not a problem to RIE etch.  Thanks.
>
> Sincerely,
>
>
> Robert Dean
>
> Research Associate IV
> Center for Advanced Vehicle Electronics
> Auburn University
> 200 Broun Hall
> Auburn, AL 36849
>
> Voice: 334-844-1838
> Fax:   334-844-1898
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