Helo Roger,
if your structure withstand temperatures up to 1200C you can structure it by
sandblasting. 3005m-holes can be done with a tolerance of about 505m.
Another possibility is to use an deep ICP-Process (Bosch).
Greetings Heike

Heike Bartsch de Torres
Dev. Eng.
Little Things Factory GmbH
Ehrenbergstr. 11
98693 Ilmenau
Germany
[email protected]

Roger Brennan schrieb:

> Greetings:
> Is the following feasible?
> 1) Mask <100> silicon wafers having aluminum and titanium structures.
> 2) Etch holes all the way through (300 microns) etching from both sides
> using EDP or KOH.
> 3) Remove the photoresist without disturbing the Ti or Al.  (I worry about
> galvanic effects during the stripping due to the presence of Si, Ti, and
> Al.)
> It is my understanding that well cured SU8 might work as the resist and
> SMST-M might work as the stripper.  The following is all I know about the
> stripper:
> "SMST-M This formulation is the standard formulation. It doesn't attact
> metals such as aluminium, gold, titanium, chromium, but a slight attact of
> copper and nickel can be observed."
>
> I have contacted the vendor of the stripper, SOTEC MICROSYSTEMS SA, but
> often users know more than the vendor.
>
> Roger Brennan
> Home:
> 1403 Forrestal Avenue
> San Jose, CA 95110
> (408)453-0711 (telephone)
> (408)573-9407 (fax)
> [email protected]
>
> Work:
> Endevco
> 355 N. Pastoria Ave.
> Sunnyvale, CA 94085
> 408-739-3533 ext 204
> [email protected]
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