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MEMSnet Home: MEMS-Talk: Hard mask for 20 um deep SiO2 RIE etch?
Hard mask for 20 um deep SiO2 RIE etch?
2001-12-19
[email protected]
2001-12-20
Liz Shelley
2001-12-20
Jon Doe
2001-12-20
[email protected]
2001-12-20
[email protected]
2001-12-20
BERAUER,FRANK (HP-Singapore,ex7)
Hard mask for 20 um deep SiO2 RIE etch?
[email protected]
2001-12-19
We have good results with oxide as a hard mask. Typical selectivities are
>60:1 using oxide. Better than that we have had great results using SU-8 from
Microchem corp. Initial results show a 40:1 selectivity pr:silicon and SU-8
formulations can range from 5-100 microns. It also seems to ash or strip
reasonably well at around 3 microns/minute. Bob Henderson

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