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MEMSnet Home: MEMS-Talk: Hard mask for 20 um deep SiO2 RIE etch?
Hard mask for 20 um deep SiO2 RIE etch?
2001-12-19
[email protected]
2001-12-20
Liz Shelley
2001-12-20
Jon Doe
2001-12-20
[email protected]
2001-12-20
[email protected]
2001-12-20
BERAUER,FRANK (HP-Singapore,ex7)
Hard mask for 20 um deep SiO2 RIE etch?
[email protected]
2001-12-20
Yes, our system is an ICP downstream reactor with lower electrode bias at
13.56 mhz. We run 95% oxygen 5% cf4 Conditions are ICP power 1200 watts,
lower electrode 100 watts. Pressure is 250 millitorr. Is your system
configured like this? Good luck. Bob

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