SU-8 (especially heavily cross-linked films) does not strip well
in Oxygen plasma. Adding Hydrogen radicals helps a lot. We tried
NH3, but other sources, e.g. forming gas, should work as well.

Seasons Greetings,
        Frank Berauer
        Senior R&D Engineer
        Hewlet-Packard Singapore


-----Original Message-----
From: Liz Shelley [mailto:[email protected]]
Sent: 20 December 2001 22:57
To: [email protected]
Subject: Re: [mems-talk] Hard mask for 20 um deep SiO2 RIE etch?


BOB
Can you give me details on the parameters by which you ash SU-8
(Power/gases/flows/processing pressures)?
Thanks for your help
Liz

> From: [email protected]
> Reply-To: [email protected]
> Date: Wed, 19 Dec 2001 16:05:10 EST
> To: [email protected]
> Subject: Re: [mems-talk] Hard mask for 20 um deep SiO2 RIE etch?
>
> We have good results with oxide as a hard mask. Typical selectivities are
>> 60:1 using oxide. Better than that we have had great results using SU-8
from
> Microchem corp. Initial results show a 40:1 selectivity pr:silicon and
SU-8
> formulations can range from 5-100 microns. It also seems to ash or strip
> reasonably well at around 3 microns/minute. Bob Henderson
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