Hi All

I would like to clarify my question and problem that I
encountered.

I used Si (100) and Si(110) wafers using thermal oxide
as etch mask. I etched those wafers in KOH solution. I
am interested in the bottom surface (not side walls)
of patterned wafers etched in KOH.

What I found is that by naked eyes the bottom surface
of (110) wafers is much rougher than (100) wafers. I
am pretty sure that that roughness is not from powder
deposited on surface but from its surface.
I am wondering if anyone found the same thing that I
noticed. If so, can anyone give explanation of that?

Thanks.

Onnop
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