Dear MEMs enthusiastists,
        One of my Collegues is trying to etch both Silicon Nitride and
Silicon Dioxide
using a 'single step' Plasma Etch Chemistry'.

The 'catch' is that the Plasma Chemistry MUST etch Nitrde and Oxide at a
similiar
rate, i.e, a selectivity close to 1:1.

I suggested to him to lower the POWER and introduce a small percentage of
SF6.

The system he uses is a RIE etcher.


regards,

phil lau