Baecklund and Rosengren published papers (J.Mems, 1992 and 1995) which
describe the fabrication of V-grooves and free-standing studs with 45 degree
angles to the Si surface ((100) wafer) using KOH and EDP.
-Nihat
-----Original Message-----
From: [email protected] [mailto:[email protected]]On
Behalf Of David Nemeth
Sent: Monday, January 14, 2002 8:24 AM
To: [email protected]
Subject: RE: [mems-talk] a 45-degree inclined surface
One trick I saw in the literature was to add a surfactant to the TMAH
etch(the paper mentioned using something called NCW-601A nonionic surfactant
from the Wake Pure chemical company. They used 22% TMAH solution with 1%
weight surfactant.) This has the effect of greatly reducing the etch rate
of the <110> plane in silicon, so a pattern with straight edges patterned
parrallel to the <010> plane (45 degrees off of the normal wafer flat) would
reveal the <110> plane, which is at 45 degrees.
I don't remember the name of the journal, but the authorwas Masayuki
Sekimura at Toshiba Corp (email [email protected]). The paper
identification on the bottom is 0-7803-5194-0/99 page 650.
Hope this helps. I would imagine other surfactants would have a similar
effect.
David Nemeth
Senior Process Engineer
Sophia Wireless, Inc.
14225-C Sullyfield Circle
Chantilly, VA
Ph: (703) 961-9573 x206
Fax:(703) 961-9576
-----Original Message-----
From: [email protected] [mailto:[email protected]]On
Behalf Of ahmed osman
Sent: Monday, January 14, 2002 6:57 AM
To: [email protected]
Subject: [mems-talk] a 45-degree inclined surface
Hi all,
Is there a micromachining technique that can achieve a surface 45
degree-inclined with respect to the wafer surface? I'm not restricted to a
specific material nor to a specific technology,but the 45-degrees should be
achieved with high accuracy and thus i first considered wet etching in
silicon but i failed to get the required angle by any of the known tricks.
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