Hi,
does anybody has expierence about process parametes (O2/CHF3) to etch with
RIE in SiO2 to get a 45 degree profile. The process should tend to isotrop
etching.
Other question is to find a Resist which is wear-resistant in RIE to etch in
SiO2 405m deep ?
I hope that somebody have a idee ?




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> Martin Priester
> Alcatel SEL AG, Dept. ZFZ/O
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