Dear all :
I try to make an Au electrode pattern on SiO2/high doped-Si using AZ5214.(The
structure is very simple.)

Before Au(100nm) deposition, I used Ti(40nm) as an adhesion layer in the
thermal evaporator.
The temperautre(in substrate) during metal process is about 100C for 10
minutes.

In process of lift-off by aceton(~80C) and ultrasonic agitation, I failed to
remove the background of the electrodes.
("dirty with a thin network patterns" or "never-removed")
(In Al case, I removed very easily in my lift-off procedure.)

Then, I guess the temperature was so high. is it right?
Should I use other metal evaporation method or other lift-off procedure?

AZ5214 process was carried "without" hard-baking or cholrobenzene.

Please give me any comments to beginner in MEMS.

Sungjun