I represent a client that is looking to get two thin films deposited on
10-20 wafers.  The Si (100) wafers are 4" (100mm) in diameter, and the
desired films are as follows:

1. 2000 A LPCVD Si3N4.
2. 1000-2000 A TiN or TiAlN (TiAlN preferred).

In addition, the following film properties are desired for the TiN/TiAlN:

1. Specific resistivity of 30~50 micro-ohm.cm, and the sheet resistance of
the layer is about 3ohm/square at the layer thickness of 1000~2000A.
2. The thermal coefficient of resistivity should be as low as possible - at
least lower than about 700 (or 800 ) ppm/degC.
3. The thermal coefficient of expansion should be as low as possible - at
least lower than about 10 ppm/degC.

My client would like to identify a potential source and send the wafers
within 2-3 weeks.  Please get back to me with a quote and turn around time,
and feel free to contact me with any questions.  If you do not provide this
service, but have recommendations on who could, that would be very helpful.

Thanks,
Kevin

Kevin C. Stark, Ph.D.
Senior Program Manager
NineSigma, Inc.
21945 Chagrin Blvd.
Cleveland, OH  44122
216-295-4806
216-295-4825 (fax)
[email protected]
www.ninesigma.com