I am looking assistance in finding techniques to join a silcion wafer
(n-type) via an electrically conductive bond to a conducting handle wafer
(preferably silicon). The issue is further complicated by the need to free
the silcion device wafer later in the process, for the bond to be HF
resitant and to not represent a contamination risk in a CMOS fab.

Anodic bonding, fusion bonding and Si-Au eutectic bonding are thus not
appropriate.

Can anyone help me by suggesting possible avenues for me to investigate
further, such as suitable metal eutectic/conductive adhesive/conductive
polymer/solder layers? Details of companies already offering (or planning to
offer) such services would also be gratefully received.

Many thanks in advance for you assistance,

Yours sincerely,

Karen Smith
Microsystems Consultant
Coventry, UK

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