Dear Sirs,


I am doing anisotropic etching of (110) Si Wafers.
I use KOH solution with IPA.
The problem is that at the bottom of (110) surface form line like hills.
the short axis of this lines points to [100] direction.
the concentration and dimentions of this fetures become smaller by adding
IPA but don't disapear.
I think it has something to do with, may be local, etch rate changes of
{110}/{100} planes but I dont know how to suppress it.
Any suggestion will be welcome.

Thanks

Igal Chertkow