A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: TMAH Etching
TMAH Etching
2002-05-24
Full Name
2002-05-26
chakravarthy.S.Yamarthy
2002-05-28
Gang Li
2002-05-28
il-seok Son
2002-05-28
chakravarthy.S.Yamarthy
2002-05-29
il-seok Son
2002-05-28
Michael D Martin
2002-05-28
BERAUER,FRANK (HP-Singapore,ex7)
2002-05-28
chakravarthy.S.Yamarthy
2002-05-30
Michael D Martin
TMAH Etching
chakravarthy.S.Yamarthy
2002-05-28
Dear Frank,

We have some spacings in the cantilever beam that
would allow the TMAH to pass through the beam  and
etch the silicon underneath the beam.Regarding the
lateral etch we would be etching for more amount of
cavity underneath the beam so that the lateral etching
would completely release the cantilever beam.

cheers
chakry
--- "BERAUER,FRANK (HP-Singapore,ex7)"
 wrote:
> Dear Chakry,
>
> I am not surprized about the Al etch: TMAH does
> attack Al and the
> only way to prevent this is by "doping" the solution
> with lots of
> Si (search the list archives for earlier posts with
> literature on
> how to do this). Alternatively, leave the Al covered
> by SiN and
> open the contact pads after TMAH etching.
> I am, however, surprized that you can "underetch" a
> beam. Since
> TMAH does almost not etch sideways (on 100 Si at
> least) and leaves
> a 55 deg angle slope from masking patterns (leaving
> a trench shape
> like #\_/#, I wonder how you do that. Can you
> explain?
>
> Greetings,
>       Frank Berauer
>       Senior R&D Engineer
>       Hewlett-Packard Singapore
>
>
> -----Original Message-----
> From: Full Name [mailto:[email protected]]
> Sent: Saturday, May 25, 2002 3:19 AM
> To: [email protected]
> Subject: [mems-talk] TMAH Etching
>
>
> Hi,
>
> We were trying to Etch silicon under the cantilever
> beam through
> TMAH(10% W/W in water)+SA(40% in aqeous
> solution)+APODS(Ammonium peroxy
> disulphate).The entire mixure was heated to 80
> degree centigrade.
>
> After the devices were subjected to etching for 1
> hour,we could get some
> of the silicon under the beam got etched but the
> saddest part is the
> aluminum bond pads which were open through the
> passivation layer(silicon
> dioxide about 9000 Angstroms) were completely etched
> away.
>
> Can anyone suggest me the proper TMAH etching of
> silicon that should not
> touch the aluminum.
>
> Thanks
> Chakry
> _______________________________________________
> [email protected] mailing list: to unsubscribe
> or change your list
> options, visit
>
http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS
> processing services.
> Visit us at http://www.mems-exchange.org/
> _______________________________________________
> [email protected] mailing list: to unsubscribe
> or change your list
> options, visit
>
http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS
> processing services.
> Visit us at http://www.mems-exchange.org/


=====
To Know That We Know What We Know,And That We Do Not Know,What We Do Not
Know:That Is The True Knowledge.
Confucius
Yahoo! - Official partner of 2002 FIFA World Cup
http://fifaworldcup.yahoo.com

reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Tanner EDA by Mentor Graphics
Addison Engineering
Process Variations in Microsystems Manufacturing
MEMS Technology Review