I've found that concentrated HF will peel the PR right off very
quickly. It's not a matter of the HF etching the PR.

Jesse Fowler
  UCLA/MAE Dept., 420 Westwood Plaza, Room 37-129, ENGR IV
  Los Angeles, CA 90095-1597 | (310)825-3977
"Battery is safe if not provoked." -- _Batteries in a Portable World_
----- BEGIN GEEK CODE BLOCK -----
Version 3.1
GE/S$ d- s:- a- C+ UL P L++ E- W+ N+@ !o K++ w !O M !V PS+ PE++(-) Y
PGP-- t++@ 5++ X R+ !tv b++ DI+ D G e++/*>++++/* h---/* r+++ y+++
------ END GEEK CODE BLOCK ------


On Thu, 30 May 2002, Jing Liu wrote:

> To who may concern,
>
> I want to mask HF etching with photoresist. Just now, somebody suggest me that
> for the same thickness of oxide I will etch. The photoresist could stand
> buffered HF, but for concentrated HF, it will not. Is it exactly the case?
> Could I be able to find some reference?
>
> BTW, we have Shipley 1813, AZ 5214, Az 9245 in the lab. Does anyone have some
> date of how fast they will etched in HF?
>
> Thanks,
>
> Jing
> _______________________________________________
> [email protected] mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/