A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: oxide layer on SiN films?
oxide layer on SiN films?
2002-06-06
Christopher F. Blanford
2002-06-06
[email protected]
2002-06-07
Roger Shile
oxide layer on SiN films?
Roger Shile
2002-06-07
My understanding is that  nitrides oxidize on the surface when exposed to air,
since oxidation is energetically more favorable than nitridation.

Some years ago I worked with an LPCVD  boron nitride process.  I had numerous
samples of this material analyzed by both XPS and Auger.  The result was
always high oxygen contact near the surface, with negligable oxygen in the
bulk.  I would be surprised if similar oxidation wasn't present on the surface
of silicon nitride.

Roger Shile

>>> [email protected] 06/06/02 09:02AM >>>
Not very much oxide growth on top of nitride unless you deposit via pecvd.
Bob Henderson
_______________________________________________
[email protected] mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/

"This email and any attachments may contain information that is confidential
and proprietary information of Veeco Instruments Inc. and are intended only
for the use of the addressee. Unauthorized use, distribution or copying is
forbidden. If you have received this email in error, please notify the sender
immediately by return email and delete all copies of this message and any
attachments from your computer. Thank you."

reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Process Variations in Microsystems Manufacturing
The Branford Group
Harrick Plasma, Inc.
MEMStaff Inc.