Hi Arnaud

AlGaAs/GaAs the selectivities are found to be around 80
with gas ratio of BCl3 (12sccm)/SF6(3 sccm) in conventional
RIE ethcing. However, increasing the ICP power the etch
rate are increses but the selectivities decrease by order
of 2.

Good Luck...

Parshant
Marland MEMS LAb
Univeristy of Maryland
MD-20742

--- MARGOLLE Arnaud  wrote:
> dear fellow
>
>   I need to etch AlGaAs and InGaAs layer on GaAs with
> BCl3/SF6 or
> BCl3/CHF3 chemistry
> (we had C2F6, Cl2, O2,Ar, N2 too)Do you know something
> about the gas
> :
> Ratio % ,sccm ;RF power, pressure  to etch
>
> thanks
>
>
>         Arnaud Margolli
>         DGA - Celar
>         division DIRAC-TECN
>         failure analysis -ECE Dep
>         + 33  (0)  2 99  42 66 06
> _______________________________________________
> [email protected] mailing list: to unsubscribe or
> change your list
> options, visit
> http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing
> services.
> Visit us at http://www.memsnet.org/
Yahoo! - Official partner of 2002 FIFA World Cup
http://fifaworldcup.yahoo.com