Hi Margolle

SiCl4, CF4, O2 and He are used also for high slective
etching of AlGaAs/GaAs  with different ratios it can be
achieved ansiotropic as well isotropic etch for low Al mole
fraction, I donot know what Al mole fraction you are
using..

it is good to have look at the reference - J of Electrochem
Soc. Vol 140, No7 July 1993 pp 2116.

Good luck !!!!!


Kumar Parshant
MML Maryland
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