Dear all,

I am fabricating a device with Si/Ti(8 nm) /Pt (100 nm) /PZT (10 um),
when the PZT is etched with HF:HCL the Pt is observed to peel from the
Substrate. Analysis has indicated the formation of a lead silicate glass
layer at the point of peeling. I have tried to increase Pt (300 nm)
thickness to reduce the diffusion of lead to the Si, unfortunately Pt is
a porous metal. In addition I have tried to deposited TiO2 (300 nm by
sputtering) between the Ti and Si. Neither of these approaches seems to
have worked in eliminating lead diffusion or glass formation.

Does anyone know of an alternative layer that I can deposit that might
stop the diffusion of lead?