Hello mems peeps,

I know of some people "descumming" SiC with an O2 etch.  They claim to have
some residual SiC after doing an oxide etch in CF4. Is it true that the
residue might be removed with an O2 etch?  The O2 etch is for 1 min at 50 W
and ~50 sccm O2, typical for a photoresist descum.

Thanks

L Hunter