Luke,
Thank you for your advice.

When we tried lift-off of SiO2, photoresist seemed to deteriorate
during SiO2 deposition, so that it was impossible to remove
photoresist completely by using a sonicating water bath.
Sputtering time was about 30 minutes (250nm thick),
no substrate heating and Ar-10%O2 sputtering gas were used in
our experiments.

I'm wondering if you use a special photoresist, which is very thick
or has higher heat or plasma resistance, etc. I am also interested in your
sputtering conditions like sputtering time (SiO2 thickness) and a
substrate-target distance.

Best regards,
Masa Imura







[email protected] on 2002/07/12 03:04:48

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件名: RE: [mems-talk] SiO2 patterning


>Depending on your feature size you might try lift-off by using a
sonicating
>water bath.  It may also help to skip the adhesion promoter for the
>photoresist.  I've tried this with a very large features and it seemed to
>work well enough.

>Luke Hunter

-----Original Message-----
>>From: [email protected] [mailto:[email protected]]On
>>Behalf Of [email protected]
>>Sent: Tuesday, July 09, 2002 12:17 AM
>>To: [email protected]
>>Subject: [mems-talk] SiO2 patterning


>>Dear all,

>>We are struggling with patterning SiO2 on ZnO thin film.
>>I would like to make an SiO2 pattern without damaging ZnO.
>>Thicknesses of SiO2 and ZnO are 250 and 800 nm, respectively.

>>Lift-off seems to be difficult because it is hard to
>>get rid of photo resist after sputtering SiO2.
>>We haven't tried, but wet or dry etching might be possible.

>>Could anyone give us some advice, please?

>>Thank you in advance.

>>Masa Imura