Dear colleagues,
    I am doing a project, in which I need to use ZnSe to fill a 2um deep,
20um diameter holes. What I did is use photoresist (AZ5214 or AZ 4330) as
mask, etch the holes using RIE. Then use E-beam deposition to deposit 2um
thick ZnSe. The ZnSe is lift off by Aceton after that. However, what I found
under SEM is there is a 2000-3000A gap between the material I deposit and
the side wall of the holes. Is this the result of the RIE undercut, or other
shadow effect? Is there any literature discussing how to control the etch
and deposition to get perfect hole filling? ( BTW I don't have CMP, so it
doesn't work for me.)
   Thanks a lot for your advices

Qingwei Mo

Phone: (512)-471-7917 (O)
|Microelectronic Research Center
University of Texas at Austin