Hi colleagues,

I have about 5nm of Alumnium thin film and I blast it with oxygen plasma
with an RF barrel asher...the end result shows a significantly higher
resistance, hence more oxidation has occurred (besides the native oxide on
the surface) , the question is how deep is the oxidation? Is the Al thin
film fully oxidized or not? What are the possible stochiometry of alumnium
oxide? Is there anyone out there who can share with me some of their
results on this? Thanks in advance!

Regards,
Weng