Hi All,

I am working with the wet etch of GaAs in citric
acid:Hydrogen peroxide::5:1. I am facing the problem that
Electrode deposited as Au/Ni/Ge/Au layers start delaminated
after 55-60 mintues of etching. However if we anneal the
sample for 30 mintues at the 150 degree calcious, the
effect is less.

Any comment will be appericiated

Thx

Kumar
Maryland MEMS Lab
University of Maryland
College Park-MD 20742
Tel 301-405-0364


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