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MEMSnet Home: MEMS-Talk: SiO2:Si3N4 etch selectivity in HF
SiO2:Si3N4 etch selectivity in HF
2002-10-01
X. Yuan
2002-10-02
bille@npphotonics (Bill Eaton)
2002-10-02
[email protected]
2002-10-03
[email protected]
SiO2:Si3N4 etch selectivity in HF
X. Yuan
2002-10-01
Hi,

I released my polySi device (LTO as the sacrificial
layer) in concentrated HF. However, due to
the long release time, the field nitride (LPCVD
850C) got completely etched away. Does anyone
know a good recipe which can etch oxide fast
while has a very good selectivity over nitride?

Thanks.

Xyuan

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