Yuan,
One more comment, one advantage of using Ozone may is ability to run
at atmosphere. This allows an inline system with no vacuum system. You
should also be aware that there are a number of atmospheric plasma heads
with geometries that enhance electron density and hence the amount of
ozone produced/ watt.
-Mike
>>> [email protected] 10/10/02 09:01AM >>>
Yuan,
Quick comparison, in the old days a problem with any plasma was
that it created fast moving electrons. These would diffuse into the
circuit being cleaned and create a shift in electrical parameters. In
the case of mos it could cause a short and ruin the operation of the
device. Ozone does not produce any electrons. It is on the down side
very slow and limited to one gas obviously. With down stream plasma the
level of electron damage is reduced considerably and with charge
grounding electrons are removed totally from the plasma. This allows
the use of any gas and a far more aggressive organic remover in the case
of Oxygen plasma. A simple comparison of 2 wafer resist strippers 1)
Oxygen plasma wafer temperature 150 degrees C 10,000 Angstroms of resist
removed in 35 seconds. 2) Ozone resist stripper at 350 degrees C 10,000
Angstroms of resist removed in 3.5 minutes. As the action is a simple
chemical action and temperature accelerates it you can see the Ozone is
less aggressive.
-----Original Message-----
From: X. Yuan [mailto:[email protected]]
Sent: Wednesday, October 09, 2002 2:36 PM
To: [email protected]
Subject: [mems-talk] UV-ozone versus O2 plasma
Hi,
I am trying to find some information about
UV-ozone clean in the area of semiconductor
fabrication. Specifically, I am interested
in the comparision between UV-ozone clean
and O2 plasma clean. Is there any advantage
of ozone? I really couldn't find any useful
information on the web. Could anyone provide
anything that I can start with? Thanks much.
Yuan
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