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MEMSnet Home: MEMS-Talk: Diffusion barrier for Cr/Au or Ti/Au
Diffusion barrier for Cr/Au or Ti/Au
2002-10-22
Xing Yang
2002-10-23
Neal Ricks
2002-10-23
Simone Capecchi
2002-10-24
Niels Olij
2002-10-24
lakshmikanth namburi
Diffusion barrier for Cr/Au or Ti/Au
Simone Capecchi
2002-10-23
It seems Cr and Ti start to diffuse through Au at temperatures as low as
200-300C.
Sputtered TiW and TiN (~1000A) should also be good barriers

Regards

Simone Capecchi
Optical Engineer
Terahertz Photonics Limited
Rosebank park
Livingston
EH54 7EJ
Tel :- 01506-818534
Fax :- 01506-818577

 -----Original Message-----
From:   Xing Yang [mailto:[email protected]]
Sent:   23 October 2002 03:09
To:     [email protected]
Subject:        [mems-talk] Diffusion barrier for Cr/Au or Ti/Au


In Au metalization process, the common adhesion layer Cr or Ti
tends to diffuse through the Au layer, especially at high
temperatures. A quick Google search shows that Pt or Pd has
been commonly used as the diffusion barrier layer. I wonder if
anyone has done any experiments or know any published papers
on this topic. I am looking for information on what the diffusion
barrier layers and their thicknesses have been tried and how
effective they are.

Any info will be appreciated.

Xing Yang



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