Dear all:

I have been trying to coat a 100~150 um thick of photoresist on a 4" wafer.
I am usign photoresist AZ100XT and spin-coat twice. Each spin-coating layer is
about 50~65 um thick. There are some boubles appear on the surface of
photoresit layer. After the pattern is transfered to the photoresit by using UV
exposure, the un-want pattern is very difficult to remove in the develper
solution (1:3 diluted AZ-400K). Therefore, the pattern is not satisfied after
development.

I hope that anyone who knows the thick photoresist coating(100~150um) on the
photolithography process, and can provid me with advices about the material
information and process parameters.

I really appricate for your help and thank you for your attention.

Jack with best regards!
Graduate Student
Louisiana Tech University

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