I can tell you the in-situ doped polysilicon deposition process we use here
(this is Transducers '95 by Bieble and Mulhern, by the way).

Temp = 585C (flat profile)
Pressure = 500 mtorr
SiH4 = 50 sccm
PH3 (1.6% in SiH4) = 10 sccm (gives mole fraction of about 3.2x10-3)
Anneal: 900C, 7 min in Argon using RTA

Hope this helps!

M. Houston