Hi,

We are currently working on a device that will be bulk
micromachined in DRIE using low resistivity Silicon
wafers. I was wondering if anybody had any experiences
on the performance of the DRIE systems on highly
p-Boron doped (around 10^19 cm^-3) low resistivity
(around 0.01 ohm.cm.) wafers. I am especially
concerned with the directionality of the etch in a
typical DRIE (plasmatherm)  system which does not have
the anti-notching hardware add-on and uses BOSCH
process parameters (though I can play with the
passivation and etching cycle durations).

Any kind of feedback would be greatly appreciated,

Thanks,

Serdar Sezen
Advanced Microsystems Lab
University of Minnesota

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